Thermal dissipation in a laser and semiconductor optical amplifier

Joël Jacquet; Yannick Abner; Manish Choffla; Claire-Astrid Paepegaey; Kinda Mheidly

doi:10.1117/12.870601

16 November 2010 Thermal dissipation in a laser and semiconductor optical amplifier

Joël Jacquet, Yannick Abner, Manish Choffla, Claire-Astrid Paepegaey, Kinda Mheidly

Proceedings Volume 7847, Optoelectronic Devices and Integration III; 78470I (2010) https://doi.org/10.1117/12.870601
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

In this paper, we calculate the thermal dissipation in semiconductor Optical Amplifier. We investigate the effect of the material composition, the number of wells, the type of structure (Buried or Ridge), on the thermal resistance of the component and try to extract some rules towards minimization of temperature elevation. An increase in the number of quantum wells within the same type of structure increased the thermal resistance but not significantly. The type of source, a concentrated single source or a distributed in the different wells, does not play a significant role in the thermal resistance of a structure. The difference between Pside up or down mounted device is clear and well known. The variation of Separate Confinement Heterostructure has, in both the P_up and P_down structures, almost no effect on the R_th. The influence of heat repartition inside the wells has been evaluated. Finally the overall heat dissipation in the optical module is calculated; the objective is to the decrease the overall electrical consumption keeping the performances required by the application.

Citation Download Citation

Joël Jacquet, Yannick Abner, Manish Choffla, Claire-Astrid Paepegaey, and Kinda Mheidly "Thermal dissipation in a laser and semiconductor optical amplifier", Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78470I (16 November 2010); https://doi.org/10.1117/12.870601

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