Improved characterization of transmitted wavefront error on CADB epoxy-free bonded solid state laser materials

Nick Traggis; Neil Claussen; Andy Bayramian; Kathleen Schaffers; Bob Deri

doi:10.1117/12.877184

15 February 2011 Improved characterization of transmitted wavefront error on CADB epoxy-free bonded solid state laser materials

Nick Traggis, Neil Claussen, Andy Bayramian, Kathleen Schaffers, Bob Deri

Author Affiliations +

Proceedings Volume 7912, Solid State Lasers XX: Technology and Devices; 79121K (2011) https://doi.org/10.1117/12.877184
Event: SPIE LASE, 2011, San Francisco, California, United States

Abstract

Current state-of-the-art and next generation laser systems-such as those used in the NIF and LIFE experiments at LLNL-depend on ever larger optical elements. The need for wide aperture optics that are tolerant of high power has placed many demands on material growers for such diverse materials as crystalline sapphire, quartz, and laser host materials. For such materials, it is either prohibitively expensive or even physically impossible to fabricate monolithic pieces with the required size. In these cases, it is preferable to optically bond two or more elements together with a technique such as Chemically Activated Direct Bonding (CADB©). CADB is an epoxy-free bonding method that produces bulk-strength bonded samples with negligible optical loss and excellent environmental robustness. The authors have demonstrated CADB for a variety of different laser glasses and crystals. For this project, we will bond quartz samples together to determine the suitability of the resulting assemblies for large aperture high power laser optics. The assemblies will be evaluated in terms of their transmitted wavefront error, and other optical properties.

Citation Download Citation

Nick Traggis, Neil Claussen, Andy Bayramian, Kathleen Schaffers, and Bob Deri "Improved characterization of transmitted wavefront error on CADB epoxy-free bonded solid state laser materials", Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79121K (15 February 2011); https://doi.org/10.1117/12.877184

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