Paper
21 February 2011 Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment
H. T. Duc, M. Pochwala, J. Förstner, T. Meier, S. Priyadarshi, A. M. Racu, K. Pierz, U. Siegner, M. Bieler
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Abstract
We experimentally and theoretically investigate injection currents generated by femtosecond single-color circularly-polarized laser pulses in (110)-oriented GaAs quantum wells. The current measurements are performed by detecting the emitted Terahertz radiation at room temperature. The microscopic theory is based on a 14 x 14 k • p band-structure calculation in combination with the multi-subband semiconductor Bloch equations. For symmetric GaAs quantum wells grown in (110) direction, an oscillatory dependence of the injection currents on the exciting photon energy is obtained. The results of the microscopic theory are in good agreement with the measurements.
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H. T. Duc, M. Pochwala, J. Förstner, T. Meier, S. Priyadarshi, A. M. Racu, K. Pierz, U. Siegner, and M. Bieler "Injection currents in (110)-oriented GaAs/AlGaAs quantum wells: recent progress in theory and experiment", Proc. SPIE 7937, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, 79370U (21 February 2011); https://doi.org/10.1117/12.876972
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KEYWORDS
Quantum wells

Terahertz radiation

Gallium arsenide

Semiconductors

Electrons

Solids

Semiconductor lasers

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