Resolution capability of SFET with slit and dipole illumination

Yuusuke Tanaka; Kentaro Matsunaga; Shunko Magoshi; Seiichiro Shirai; Kazuo Tawarayama; Hiroyuki Tanaka

doi:10.1117/12.870332

5 April 2011 Resolution capability of SFET with slit and dipole illumination

Yuusuke Tanaka, Kentaro Matsunaga, Shunko Magoshi, Seiichiro Shirai, Kazuo Tawarayama, Hiroyuki Tanaka

Proceedings Volume 7969, Extreme Ultraviolet (EUV) Lithography II; 79690Q (2011) https://doi.org/10.1117/12.870332
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

A high-resolution EUV exposure tool is needed to facilitate the development of EUV resists and masks. Since the EUV small-field exposure tool (SFET) has a high numerical aperture (NA = 0.3), low aberration & flare, and excellent stage stability, it should be able to resolve fine L/S patterns for the half-pitch 22-nm & 16-nm nodes. In this study, we evaluated the resolution capability of the SFET and obtained 22-nm L/S patterns with x-slit illumination and clear modulation of 16-nm L/S patterns with x-dipole illumination. The resolution limit of the SFET seems to be about 15 nm. The main cause of pattern degradation in 16-nm L/S is probably resist blur. To obtain good shapes for this pattern size, the resist blur of less than 3.5 nm (σ) is required. The use of y-slit illumination was found to reduce the linewidth roughness (LWR) of resist patterns. Further reduction of the LWR requires a higher image contrast and a smaller flare. Due to the central obscuration, the image contrast of the SFET is sensitive to the change of pupil fill. The degradation in the collector & DMT should be reduced to ensure stable aerial images. This work was supported in part by NEDO.

Citation Download Citation

Yuusuke Tanaka, Kentaro Matsunaga, Shunko Magoshi, Seiichiro Shirai, Kazuo Tawarayama, and Hiroyuki Tanaka "Resolution capability of SFET with slit and dipole illumination", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690Q (5 April 2011); https://doi.org/10.1117/12.870332

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