Paper
28 April 2011 Giant electrical control of magnetic anisotropy in magnetoelectric heterostructures using (011) PMN-PT single crystal
Tao Wu, Alexandre Bur, Hyungsuk K. D. Kim, Ping Zhao, Gregory P. Carman
Author Affiliations +
Abstract
We report giant electrical control of magnetic anisotropy in a magnetoelectric polycrystalline Ni thin film and (011)-oriented [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT) heterostructure. The (011) PMN-PT ferroelectric substrate exhibits both linear anisotropic piezoelectric response and unique giant hysteretic response. These important features can significantly tune the magnetization states via strain coupling. Reversible and permanent magnetization reorientation demonstrates an approach for developing magnetoelectric memory devices.
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Tao Wu, Alexandre Bur, Hyungsuk K. D. Kim, Ping Zhao, and Gregory P. Carman "Giant electrical control of magnetic anisotropy in magnetoelectric heterostructures using (011) PMN-PT single crystal", Proc. SPIE 7978, Behavior and Mechanics of Multifunctional Materials and Composites 2011, 797818 (28 April 2011); https://doi.org/10.1117/12.880701
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Cited by 3 scholarly publications.
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KEYWORDS
Magnetism

Anisotropy

Nickel

Crystals

Heterojunctions

Thin films

Composites

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