Paper
10 January 2011 Optical properties of semiconductors in exciton range of spectrum in non-stationary regime taking into account the exciton-exciton interaction
P. I. Khadzhi, L. Yu. Nadkin
Author Affiliations +
Proceedings Volume 7993, ICONO 2010: International Conference on Coherent and Nonlinear Optics; 79930T (2011) https://doi.org/10.1117/12.881584
Event: International Conference on Coherent and Nonlinear Optics (ICONO 2010) and International Conference on Lasers, Applications and Technologies (LAT 2010), 2010, Kazan, Russian Federation
Abstract
The non-stationary theory of the pump-probe method of investigation of the optical properties of semiconductors in the exciton range of spectrum taking into account the exciton-photon and elastic exciton-exciton interactions was elaborated. The time evolution of the exciton density and the imaginary component of the susceptibility for the different shapes of incident strong pulse were investigated.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. I. Khadzhi and L. Yu. Nadkin "Optical properties of semiconductors in exciton range of spectrum in non-stationary regime taking into account the exciton-exciton interaction", Proc. SPIE 7993, ICONO 2010: International Conference on Coherent and Nonlinear Optics, 79930T (10 January 2011); https://doi.org/10.1117/12.881584
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Excitons

Semiconductors

Optical properties

Optical semiconductors

Crystals

Photons

Switching

Back to Top