Role of ellipsometry in DPT process characterization and impact of performance for contact holes

Itaru Kamohara; Vitaliy Domnenko; Alexander Philippou

doi:10.1117/12.899901

19 May 2011 Role of ellipsometry in DPT process characterization and impact of performance for contact holes

Itaru Kamohara, Vitaliy Domnenko, Alexander Philippou

Proceedings Volume 8081, Photomask and Next-Generation Lithography Mask Technology XVIII; 80810R (2011) https://doi.org/10.1117/12.899901
Event: Photomask and NGL Mask Technology XVIII, 2011, Yokohama, Japan

Abstract

We analyzed the lithographic performance of a double patterning technology (DPT) with resist freeze (LFLE) process for printing dense contact holes (CH). For the first time, we quantified the contribution of the substrate - frozen resist and topography effects. The impact on image contrast, and NILS was studied through-pitch. In comparing to the case of a uniform L/S, the image through-pitch performance is degraded in LFLE CH. This is resulted from diffraction by the underlying topography and materials. The process steps (between first-and-second Litho) cause additional challenges in the fabrication of CHs using DPT. Current inspection of the process effects only observes the reflected signal for position alignment. We have introduced simulations of a phase change in polarized signal (ellipsometry) after first and second lithography steps for suggesting a new methodology for detection and validation of topography changes in DPT flow. In DPT the first Litho result is fabricated in substrate, so the analysis of ellipsometry signal can be applied to sensitively detect correlations between two steps. The spectroscopic ellipsometry simulation results were shown; α and β parameters demonstrate the sensitivity w.r.t. substrate topography, by changing the incident optical direction from x-z to y-z plane. This represents the correlation between parameters observed by respective Litho steps of perpendicular orientation. Furthermore, ellipsometry signal was used to optimize the "frozen" resist n and k values w.r.t aerial image performance, which can be fed back to DPT design. Concluding, the information obtained by ellipsometry is useful to characterize substrate topography in DPT design.

Citation Download Citation

Itaru Kamohara, Vitaliy Domnenko, and Alexander Philippou "Role of ellipsometry in DPT process characterization and impact of performance for contact holes", Proc. SPIE 8081, Photomask and Next-Generation Lithography Mask Technology XVIII, 80810R (19 May 2011); https://doi.org/10.1117/12.899901

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available