Metal oxide nanowire growth for nanotechnology-enhanced device applications

M. M. Oye; J. Gacusan; O. Lenz; T. Ngo-Duc; J. M. Velazquez; E. Arreola; H. Jethani; M. Rohovie; B. Gigante; A. Kar; B. Kim; A. Hannon; A. Savvinov; Y. Lu; Ji. Li; M. Meyyappan

doi:10.1117/12.899408

16 September 2011 Metal oxide nanowire growth for nanotechnology-enhanced device applications

M. M. Oye, J. Gacusan, O. Lenz, T. Ngo-Duc, J. M. Velazquez, E. Arreola, H. Jethani, M. Rohovie, B. Gigante, A. Kar, B. Kim, A. Hannon, A. Savvinov, Y. Lu, Ji. Li, M. Meyyappan

Author Affiliations +

Proceedings Volume 8106, Nanoepitaxy: Materials and Devices III; 81060G (2011) https://doi.org/10.1117/12.899408
Event: SPIE NanoScience + Engineering, 2011, San Diego, California, United States

Abstract

This paper presents our on-going nano-epitaxial efforts to grow tin oxide (SnO₂), zinc oxide (ZnO), and lead zirconate titanate (PZT) for nanotechnology-enhanced devices. The applicable devices involve piezoelectric energy harvesting devices and nanomaterial-enhanced chemical sensors, with the Systems-level vision involving the piezoelectric energy harvesting devices that could self-power chemical sensors for a stand-alone, self-powered device that could harvest its own power from mechanical vibrations. To this end, device concepts are presented herein and preliminary details for ZnO, SnO₂, and PZT material synthesis are presented. The growth of nanowires and nanotetrapods are presented for said device applications using vapor-liquid-solid (VLS), solution synthesis, as well as the results from other synthesis processes. Characterization was done by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS).

Citation Download Citation

M. M. Oye, J. Gacusan, O. Lenz, T. Ngo-Duc, J. M. Velazquez, E. Arreola, H. Jethani, M. Rohovie, B. Gigante, A. Kar, B. Kim, A. Hannon, A. Savvinov, Y. Lu, Ji. Li, and M. Meyyappan "Metal oxide nanowire growth for nanotechnology-enhanced device applications", Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 81060G (16 September 2011); https://doi.org/10.1117/12.899408

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