Research on I-V temperature characteristic for InSb IRFPA

Qiang Guo; Jun-ming Liu; Wei Wang; Jun-jie Si; Jing Wang

doi:10.1117/12.900503

8 September 2011 Research on I-V temperature characteristic for InSb IRFPA

Qiang Guo, Jun-ming Liu, Wei Wang, Jun-jie Si, Jing Wang

Proceedings Volume 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications; 81932O (2011) https://doi.org/10.1117/12.900503
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

I-V temperature characteristic is very important to InSb IRFPA. In order to make further studies on I-V temperature characteristic, some experiments were done. In the experiments, the operating temperature of the InSb array was gradually raised from 77k. It is shown that reverse current doesn't simply increase with the increase of the operating temperature. The reason can be attributed to the composing of reverse currents at different operating temperature. In this paper, the I-V characteristic of InSb diode at different operating temperature is briefly described. The dominant components of reverse current and its temperature characteristic are discussed. The change of detector impedance is analyzed as operating temperature is changed. At the same time, the optimized operating temperature of InSb IRFPA is presented. The limit of operating temperature at which InSb IRFPA can work normally is also given.

Citation Download Citation

Qiang Guo, Jun-ming Liu, Wei Wang, Jun-jie Si, and Jing Wang "Research on I-V temperature characteristic for InSb IRFPA", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81932O (8 September 2011); https://doi.org/10.1117/12.900503

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KEYWORDS

Sensors

Diodes

Temperature metrology

Diffusion

Electrons

Quantum efficiency

Semiconductors

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