Weak-light automatic readout collection and display on the resonant-cavity-enhanced quantum dot photoelectric sensor

F. M. Guo; H. You; W. Q. Gu; D. D. Han; Z. Q. Zhu

doi:10.1117/12.900956

18 August 2011 Weak-light automatic readout collection and display on the resonant-cavity-enhanced quantum dot photoelectric sensor

F. M. Guo, H. You, W. Q. Gu, D. D. Han, Z. Q. Zhu

Author Affiliations +

Proceedings Volume 8194, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications; 81942X (2011) https://doi.org/10.1117/12.900956
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

The weak-light characteristics of the GaAs/InGaAs resonant-cavity-enhanced (RCE) quantum dot photoelectric sensor with the resonant coupling nature are presented. In order to explore its higher sensitive application because of higher quantum efficiency, a readout integrated circuit (ROIC) of the capacitor feedback transimpendance amplifier (CTIA) was designed to deal with voltage response of novel sensor. The readout circuit integration was designed to match 2x8 the array. A computer-aided system based on the stm32 microcontroller device for obtaining the readout parameters of novel photoelectric sensor was also developed. A 633nm laser beam shot to the window of sensor with radiation intensity 7nW, the readout response voltage was over 200mV and 7.14E +07V /W responsivity at 120K and 15.8μs integration time. Integrated with high reliability and precision of the software and hardware, the system could be applied to two-dimensional gray-scale display at real-time.

Citation Download Citation

F. M. Guo, H. You, W. Q. Gu, D. D. Han, and Z. Q. Zhu "Weak-light automatic readout collection and display on the resonant-cavity-enhanced quantum dot photoelectric sensor", Proc. SPIE 8194, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, 81942X (18 August 2011); https://doi.org/10.1117/12.900956

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