Paper
15 February 2012 Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm
Fabiola A. Camargo, Sylvie Janicot, Isabelle Sagnes, Arnaud Garnache, Patrick Georges, Gaëlle Lucas-Leclin
Author Affiliations +
Abstract
We present in this work the study of a short vertical external cavity semiconductor laser in single longitudinal operation at 852 nm without intracavity elements. Two different configurations were studied, a plane-plane configuration, stabilized by the thermal lens and a plane-concave configuration. The influence of the output coupler transmission and the thermal lens has been studied. In the plane concave configuration we have demonstrated more than 100mW in stable single frequency operation using a very compact cavity emitting around 852 nm.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fabiola A. Camargo, Sylvie Janicot, Isabelle Sagnes, Arnaud Garnache, Patrick Georges, and Gaëlle Lucas-Leclin "Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm", Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 82420F (15 February 2012); https://doi.org/10.1117/12.908738
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Output couplers

Semiconductor lasers

Gallium arsenide

Semiconductors

Mirrors

Laser stabilization

Laser resonators

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