Laser-induced transient stress distribution inside a single crystal by time-resolved birefringence imaging

Takaya Tochio; Masaaki Sakakura; Shingo Kanehira; Yasuhiko Shimotsuma; Kiyotaka Miura; Kazuyuki Hirao

doi:10.1117/12.908186

15 February 2012 Laser-induced transient stress distribution inside a single crystal by time-resolved birefringence imaging

Takaya Tochio, Masaaki Sakakura, Shingo Kanehira, Yasuhiko Shimotsuma, Kiyotaka Miura, Kazuyuki Hirao

Author Affiliations +

Proceedings Volume 8243, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII; 82430E (2012) https://doi.org/10.1117/12.908186
Event: SPIE LASE, 2012, San Francisco, California, United States

Abstract

When femtosecond laser pulses are focused inside a single crystal, anisotropic structural changes such as dislocation and cleavage occur along specific orientations. It can be interpreted that the anisotropic structural changes should be induced by transient stress after photoexcitation, such as a thermal stress and stress wave. To elucidate the mechanism of the laser induced structural changes inside crystals, we developed a novel time-resolved polarization imaging system, in which circularly polarized laser pulse was used as a probe light. The system enabled us to observe laser-induced transient stress distribution as well as the orientation after focusing fs laser pulses inside MgO and LiF single crystals. Based on the observation, we elucidated the relation between laser-induced transient stress distribution and anisotropic structural change inside the crystals.

Citation Download Citation

Takaya Tochio, Masaaki Sakakura, Shingo Kanehira, Yasuhiko Shimotsuma, Kiyotaka Miura, and Kazuyuki Hirao "Laser-induced transient stress distribution inside a single crystal by time-resolved birefringence imaging", Proc. SPIE 8243, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII, 82430E (15 February 2012); https://doi.org/10.1117/12.908186

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