Increase in photoluminescence intensity of InAs columnar quantum dots on InP(001) substrate by increasing indium and phosphorous composition in InGaAsP barrier layers

Shigekazu Okumura; Nami Yasuoka; Kenichi Kawaguchi; Yu Tanaka; Mitsuru Ekawa

doi:10.1117/12.907954

23 February 2012 Increase in photoluminescence intensity of InAs columnar quantum dots on InP(001) substrate by increasing indium and phosphorous composition in InGaAsP barrier layers

Shigekazu Okumura, Nami Yasuoka, Kenichi Kawaguchi, Yu Tanaka, Mitsuru Ekawa

Author Affiliations +

Proceedings Volume 8271, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling IX; 82710R (2012) https://doi.org/10.1117/12.907954
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

We investigated the effect of the alloy composition of InGaAsP barrier layers on the photoluminescence (PL) properties of InAs columnar quantum dots (CQDs) grown by metal organic vapor phase epitaxy (MOVPE). The PL wavelength of the CQDs was controlled by the strain of the InGaAsP barrier layers for fixed bandgap wavelength conditions. The PL intensity of the CQDs showed significant increase with the bandgap energy of the barrier layers, that is, with increasing indium and phosphorus composition, due to the reduced defects and dislocation in the samples. The result is considered to be related to the miscibility of the InGaAsP quaternary alloy at a low growth temperature. By applying a larger bandgap energy to the barrier layers, triple-stacked CQDs with high crystalline quality was demonstrated in the 1.55-μm region.

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Shigekazu Okumura, Nami Yasuoka, Kenichi Kawaguchi, Yu Tanaka, and Mitsuru Ekawa "Increase in photoluminescence intensity of InAs columnar quantum dots on InP(001) substrate by increasing indium and phosphorous composition in InGaAsP barrier layers", Proc. SPIE 8271, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling IX, 82710R (23 February 2012); https://doi.org/10.1117/12.907954

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