850-nm VCSELs optimized for cryogenic data transmission

Darwin K. Serkland; Kent M. Geib; Gregory M. Peake; Gordon A. Keeler; Alan Y. Hsu

doi:10.1117/12.909590

7 February 2012 850-nm VCSELs optimized for cryogenic data transmission

Darwin K. Serkland, Kent M. Geib, Gregory M. Peake, Gordon A. Keeler, Alan Y. Hsu

Proceedings Volume 8276, Vertical-Cavity Surface-Emitting Lasers XVI; 82760S (2012) https://doi.org/10.1117/12.909590
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

We report on the development of 850-nm high-speed VCSELs optimized for low-power data transmission at cryogenic temperatures near 100 K. These VCSELs operate on the n=1 quantum well transition at cryogenic temperatures (near 100 K) and on the n=2 transition at room temperature (near 300 K) such that cryogenic cooling is not required for initial testing of the optical interconnects at room temperature. Relative to previous work at 950 nm, the shorter 850-nm wavelength of these VCSELs makes them compatible with high-speed receivers that employ GaAs photodiodes.

Citation Download Citation

Darwin K. Serkland, Kent M. Geib, Gregory M. Peake, Gordon A. Keeler, and Alan Y. Hsu "850-nm VCSELs optimized for cryogenic data transmission", Proc. SPIE 8276, Vertical-Cavity Surface-Emitting Lasers XVI, 82760S (7 February 2012); https://doi.org/10.1117/12.909590

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