Paper
11 October 2011 Local measurement of solar cell emission characteristics
Pavel Škarvada, Pavel Tománek, Lubomír Grmela
Author Affiliations +
Proceedings Volume 8306, Photonics, Devices, and Systems V; 83061H (2011) https://doi.org/10.1117/12.912310
Event: Photonics Prague 2011, 2011, Prague, Czech Republic
Abstract
Light emission inspection technique are generally used for the localization of defects. In this paper, the emission comes from reverse biased mono-crystalline solar cells. Firstly, it is demonstrated that light emission of reverse biased solar cells is observable with our system. Experimental data of light emission from cracks, bulk defects, and borders of the cell are presented. Following these measurements, a few scratches were wittingly made on the top side of the solar cell sample and light emission was measured again for the same reverse voltage value. A method for distinguishing micro-crack and scratches from recombination centers is also presented. This method is based on detecting light emission intensity while varying the sample temperature, holding the reverse bias level fixed. The light emission data are then correlated with laser beam induced current maps. It is found that there is a different light emission temperature behavior in the case of bulk recombination defects and artificial damage defects. Finally, the scratched areas are inspected as sites of local structure damage.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pavel Škarvada, Pavel Tománek, and Lubomír Grmela "Local measurement of solar cell emission characteristics", Proc. SPIE 8306, Photonics, Devices, and Systems V, 83061H (11 October 2011); https://doi.org/10.1117/12.912310
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KEYWORDS
Solar cells

Inspection

Optical testing

Crystals

Silicon

Electroluminescence

Temperature metrology

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