The effects of growth temperature of the pulse atomic layer epitaxy AlN films grown on sapphire by MOCVD

S. L. Li; H. Wang; J. Zhang; Y.-Y. Fang; W. Fan; W. Tian; Y. Li; Y. Tian; H. Xiong; C. Q. Chen

doi:10.1117/12.919653

22 February 2012 The effects of growth temperature of the pulse atomic layer epitaxy AlN films grown on sapphire by MOCVD

S. L. Li, H. Wang, J. Zhang, Y.-Y. Fang, W. Fan, W. Tian, Y. Li, Y. Tian, H. Xiong, C. Q. Chen

Author Affiliations +

Proceedings Volume 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration; 83331H (2012) https://doi.org/10.1117/12.919653
Event: Photonics and Optoelectronics Meetings 2011, 2011, Wuhan, China

Abstract

AlN epilayers were grown directly on sapphire (0001) substrates using a combined growth scheme, a low temperature nucleation layer and a high temperature pulsed-atomic-layer-epitaxy layer obtained via metal organic chemical vapor deposition. The effects of growth temperature on properties of AlN films were investigated by atomic force microscopy, high resolution X-Ray diffraction and transmittance spectral. Due to the strong influence of growth temperature on the mobility of Al adatoms and parasitic reaction, a different surface morphology and growth rate for AlN films were obtained by varying the growth temperature.

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S. L. Li, H. Wang, J. Zhang, Y.-Y. Fang, W. Fan, W. Tian, Y. Li, Y. Tian, H. Xiong, and C. Q. Chen "The effects of growth temperature of the pulse atomic layer epitaxy AlN films grown on sapphire by MOCVD", Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 83331H (22 February 2012); https://doi.org/10.1117/12.919653

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