Paper
6 April 2012 Effects of surface electric field on SnO2 room temperature gas sensors fabricated on nanospike substrates
Haizhou Ren, Pengtao Wang, Haibin Huo, Mengyan Shen, Marina Ruths, Hongwei Sun
Author Affiliations +
Abstract
SnO2 thin film room-temperature gas sensors have been fabricated on silicon nanospike surfaces prepared by femtosecond pulsed laser irradiation. The surface morphologies of the as-fabricated silicon nanospikes and SnO2 thin film gas sensors indicate that the surface roughness increased significantly after the SnO2 layer was deposited. The surface morphology and electric field distribution of the silicon nanospikes were studied with atomic force microscopy (AFM) and the electric force microscopy (EFM), respectively. The comparison between AFM morphology and EFM images shows that the aspect ratio of the nanostructures in the EFM image was larger than that in the AFM image, which indicates that the nanospikes on the silicon surface can induce an enhanced electric field around their sharp features. The electric field around the tips is further enhanced when there is electric current flowing through the SnO2 layer. The enhanced electric field and increased surface area on the nanospike structures are the main contributors to the high sensitivity of these room temperature gas sensors.
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Haizhou Ren, Pengtao Wang, Haibin Huo, Mengyan Shen, Marina Ruths, and Hongwei Sun "Effects of surface electric field on SnO2 room temperature gas sensors fabricated on nanospike substrates", Proc. SPIE 8345, Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems 2012, 83454T (6 April 2012); https://doi.org/10.1117/12.915141
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KEYWORDS
Silicon

Silicon films

Atomic force microscopy

Gas sensors

Thin films

Nanolithography

Microscopy

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