Léopold Virothttps://orcid.org/0000-0002-6005-6933,1,2,3 Laurent Vivien,1 Andreas Polzer,4 Delphine Marris-Morini,1 Johann Osmond,1 Jean Michel Hartmann,2 Paul Crozat,1 Eric Cassan,1 Charles Baudot,3 Christophe Kopp,2 Frédéric Boeuf,3 Horst Zimmermann,4 Jean Marc Fédéli2
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We report a Germanium lateral pin photodiode integrated with selective epitaxy at the end of silicon waveguide.
A very high optical bandwidth estimated at 120GHz is shown, with internal responsivity as high as 0.8A/W at
1550nm wavelength. Open eye diagram at 40Gb/s was obtained under zero-bias at wavelength of 1.55μm.
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Léopold Virot, Laurent Vivien, Andreas Polzer, Delphine Marris-Morini, Johann Osmond, Jean Michel Hartmann, Paul Crozat, Eric Cassan, Charles Baudot, Christophe Kopp, Frédéric Boeuf, Horst Zimmermann, Jean Marc Fédéli, "40Gbit/s germanium waveguide photodetector on silicon," Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84310A (8 May 2012); https://doi.org/10.1117/12.923854