Behaviour of electron and hole currents in a 3-layer heterostructure OLET

K. Jokinen; A. Bykov; R. Sliz; R. Myllyla

doi:10.1117/12.921286

30 April 2012 Behaviour of electron and hole currents in a 3-layer heterostructure OLET

K. Jokinen, A. Bykov, R. Sliz, R. Myllyla

Proceedings Volume 8435, Organic Photonics V; 84351L (2012) https://doi.org/10.1117/12.921286
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

The highest external quantum efficiency (EQE) of organic light emitting transistors (OLETs) to date has been achieved by using a 3-layer heterostructure configuration introduced by R. Capelli et al1. In this work, the behaviour of electron and hole currents in the 3-layer heterostructure OLET were investigated: the effect of the film properties of the dielectric and the active layers on the hole and electron currents were analysed. In the fabricated OLETs, electrons showed higher mobilities than holes. In contradiction, the 2-layer organic field effect transistor (OFET) consisting of two charge transporting layers with no light emitting layer indicated higher hole mobility. The results confirm that the light emitting layer significantly hinders the hole transport in the fabricated 3-layer heterostructure OLETs. Finally, the experimental results prove that reduced evaporation rate of the light emitting layer has a positive effect on the electron mobility within the device.

Citation Download Citation

K. Jokinen, A. Bykov, R. Sliz, and R. Myllyla "Behaviour of electron and hole currents in a 3-layer heterostructure OLET", Proc. SPIE 8435, Organic Photonics V, 84351L (30 April 2012); https://doi.org/10.1117/12.921286

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