A novel JFET readout structure applicable for pinned and lateral drift-field photodiodes

Andreas Süss; Bedrich J. Hosticka

doi:10.1117/12.922431

9 May 2012 A novel JFET readout structure applicable for pinned and lateral drift-field photodiodes

Andreas Süss, Bedrich J. Hosticka

Proceedings Volume 8439, Optical Sensing and Detection II; 84391D (2012) https://doi.org/10.1117/12.922431
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

Enhancement of the dynamic range of photodetectors used in advanced image sensors such as time-of-flight sensors or image sensors for automotive applications is a major research topic. In this paper an improved unipolar readout structure is presented, that is superior to the widely employed source follower readout implemented by enhancement MOSFETs. It yields a high output voltage swing and low noise, while requiring no additional processing steps. The readout structure is consisting of a low-noise JFET whose gates are formed by a floating diffusion, thus preserving in-pixel accumulation capability - which additionally improves noise performance. This structure outperforms a simple in-pixel implementation of a JFET and a photodetector in terms of the necessary area consumption, thus improving fill factor. For pixels with a pitch of several microns this readout structure is a good trade-off between area, output voltage swing and, most important, noise performance. Furthermore, since only a ground connection is needed for application, fill-factor and power-grid disturbances like DC-voltage drop can be additionally improved.

Citation Download Citation

Andreas Süss and Bedrich J. Hosticka "A novel JFET readout structure applicable for pinned and lateral drift-field photodiodes", Proc. SPIE 8439, Optical Sensing and Detection II, 84391D (9 May 2012); https://doi.org/10.1117/12.922431

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