Characterization of InSb QDs grown on InAs (100) substrate by MBE and MOVPE

Amir Karim; Oscar Gustafsson; Laiq Hussain; Qin Wang; Bertrand Noharet; Matthias Hammar; Jan Anderson; Jindong Song

doi:10.1117/12.922396

9 May 2012 Characterization of InSb QDs grown on InAs (100) substrate by MBE and MOVPE

Amir Karim, Oscar Gustafsson, Laiq Hussain, Qin Wang, Bertrand Noharet, Matthias Hammar, Jan Anderson, Jindong Song

Proceedings Volume 8439, Optical Sensing and Detection II; 84391J (2012) https://doi.org/10.1117/12.922396
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

We report on the optical and structural characterization of InSb QDs in InAs matrix, grown on InAs (100) substrates, for infrared photodetection. InSb has 7% lattice mismatch with InAs forming strained QDs, which are promising for longwave IR applications, due to their type-II band alignment. This report contains material development results of InSb QDs for increasing their emission wavelength towards long-wave IR region. Samples were grown by two techniques of MBE and MOVPE, with different InSb coverage on InAs (100) substrates. Structures grown by MBE reveal QD related photoluminescence at 4 μm. AFM investigations of the MBE grown structures showed uncapped dots of ~ 35 nm in size and ~ 3 nm in height, with a density of about 2 x 10¹⁰ cm^-2. Cross-section TEM investigations of buried InSb layers grown by MBE showed coherently strained QDs for nominal InSb coverage in the range of 1.6 - 2 monolayers (MLs). Layers with InSb coverage more than 2MLs contain relaxed QDs with structural defects due to large amount of strain between InSb and InAs. Samples with such large dots did not show any InSb related luminescence. The MOVPE grown InSb samples exhibit a strong QD related emission between 3.8 to 7.5 μm, depending on the amount of InSb coverage and other growth parameters. We report the longest wavelength observed so far in this material system.

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Amir Karim, Oscar Gustafsson, Laiq Hussain, Qin Wang, Bertrand Noharet, Matthias Hammar, Jan Anderson, and Jindong Song "Characterization of InSb QDs grown on InAs (100) substrate by MBE and MOVPE", Proc. SPIE 8439, Optical Sensing and Detection II, 84391J (9 May 2012); https://doi.org/10.1117/12.922396

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