Paper
15 October 2012 InGaAs bow-tie diodes for terahertz imaging: low frequency noise characterisation
Linas Minkevičius, Mantas Ragauskas, Jonas Matukas, Vilius Palenskis, Sandra Pralgauskaite, Dalius Seliuta, Irmantas Kašalynas, Gintaras Valušis
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Abstract
Noise characteristics of bow-tie InGaAs diodes in forward and backward directions were measured in frequency range from 10 Hz to 20 kHz at room temperature. It was found that the spectral density of voltage fluctuations changes with frequency approximately as 1/f, indicating that origin of noise is superposition of generation and recombination processes in defects of the structure. It was determined that the dependence of spectral density of current fluctuation on current in backward and forward directions at different frequencies exhibits asymmetry which reflects non-uniform electric field distribution within the structure. As both noise and sensitivity increase with bias current, optimal conditions for device operation are discussed.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Linas Minkevičius, Mantas Ragauskas, Jonas Matukas, Vilius Palenskis, Sandra Pralgauskaite, Dalius Seliuta, Irmantas Kašalynas, and Gintaras Valušis "InGaAs bow-tie diodes for terahertz imaging: low frequency noise characterisation", Proc. SPIE 8496, Terahertz Emitters, Receivers, and Applications III, 849612 (15 October 2012); https://doi.org/10.1117/12.929501
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Cited by 3 scholarly publications.
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KEYWORDS
Diodes

Terahertz radiation

Indium gallium arsenide

Signal to noise ratio

Resistance

Millimeter wave imaging

Resistors

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