Paper
15 October 2012 Studies on transmittance of silicon with AR coating films for IR transparent window
Myeongho Song, Eunmi Park, Moon Seop Hyun, Tae Hyun Kim, Hee Yeoun Kim, Gawon Lee
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Abstract
We investigated silicon as a promising material for a IR transparent window platform of IR(Infrared Ray) sensors with WLP(wafer level package), because silicon has advantages in price and CMOS process compatibility compared to Ge window although Ge exhibits higher IR transmittance than Si. Having comparable transmittance to Ge is the key to use silicon as a IR transparent window platform. We compared several types of AR coating films, SiN, SiO2, only ZnS, and Ge/ZnS for finding the condition of maximizing transmittance of Si in the range of 8 ~12 um , LW-IR(Longwave IR). Also we investigated changing of transmittance for LW-IR after thermal treatments in several ambient gases and several temperatures.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Myeongho Song, Eunmi Park, Moon Seop Hyun, Tae Hyun Kim, Hee Yeoun Kim, and Gawon Lee "Studies on transmittance of silicon with AR coating films for IR transparent window", Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 85120P (15 October 2012); https://doi.org/10.1117/12.928346
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Cited by 2 scholarly publications.
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KEYWORDS
Silicon

Transmittance

Silicon films

Infrared sensors

Antireflective coatings

Zinc

Germanium

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