Paper
15 October 2012 Fabrication of graphene based field effect transistor with copper electrodes
Pawan Kumar Srivastava, Subhasis Ghosh
Author Affiliations +
Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491O (2012) https://doi.org/10.1117/12.924958
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Graphene, 2D form of graphite, exhibits excellent electrical conductivity and many peculiar properties1-3. That’s why extensive research is going on this field worldwide. Here, we present the physico-chemical method for the synthesis of graphene sheets. Transmission electron microscopy (TEM) and Raman spectroscopy was used to characterize the graphene sheets and then graphene field-effect transistor was fabricated with copper as a sourcedrain electrode.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pawan Kumar Srivastava and Subhasis Ghosh "Fabrication of graphene based field effect transistor with copper electrodes", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491O (15 October 2012); https://doi.org/10.1117/12.924958
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KEYWORDS
Graphene

Raman spectroscopy

Field effect transistors

Electrodes

Transmission electron microscopy

Copper

Doping

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