Paper
4 March 2013 Thin AlGaN cladding, blue-violet InGaN laser diode with plasmonic GaN substrate
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Abstract
We demonstrate the possibility of fabrication of InGaN laser diode with an extremely thin lower AlGaN cladding (200 nm) by using high electron concentration, plasmonic GaN substrate. The plasmonic substrates were fabricated by one of high-pressure methods – ammonothermal method or multi-feed-seed growth method and have an electron concentration from 5x1019 cm-3 up to 1x1020 cm-3. New plasmonic substrate devices, in spite of their extremely thin lower AlGaN cladding, showed identical properties to these manufactured with traditional, thick lower cladding design. They were characterized by identical threshold current density, slope efficiency and differential gain. Thin AlGaN devices are additionally characterized by low wafer bow and very low density of dislocations (<104 cm-2).
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Szymon Stańczyk, Tomasz Czyszanowski, Robert Kucharski, Anna Kafar, Tadeusz Suski, Łucja Marona, Greg Targowski, Michał Boćkowski, and Piotr Perlin "Thin AlGaN cladding, blue-violet InGaN laser diode with plasmonic GaN substrate", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862513 (4 March 2013); https://doi.org/10.1117/12.2002440
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KEYWORDS
Cladding

Gallium nitride

Plasmonics

Semiconductor lasers

Indium gallium nitride

Near field optics

Doping

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