Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects

Congyong Zhu; Fan Zhang; Romualdo A. Ferreyra; Xing Li; Cemil Kayis; Vitaliy Avrutin; Ümit Özgür; Hadis Morkoç

doi:10.1117/12.2000558

4 March 2013 Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects

Congyong Zhu, Fan Zhang, Romualdo A. Ferreyra, Xing Li, Cemil Kayis, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç

Author Affiliations +

Proceedings Volume 8625, Gallium Nitride Materials and Devices VIII; 86252H (2013) https://doi.org/10.1117/12.2000558
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

In an effort to investigate the particulars of their stability, In_18.5%Al_81.5%N/GaN HFETs were subjected to on-state electrical stress for intervals totaling up to 20 hours. The current gain cutoff frequency f_T showed a constant increase after each incremental stress, which was consistent with the decreased gate lag and the decreased phase noise. Extraction of small-signal circuit parameters demonstrated that the increase of f_T is due to a decrease in the gate-source capacitance (C_gs) and gate-drain capacitance (C_gd) as well as the increased microwave transconductance (g_m). All these behaviors are consistent with the diminishing of the gate extension (“virtual gate”) around the gate area.

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Congyong Zhu, Fan Zhang, Romualdo A. Ferreyra, Xing Li, Cemil Kayis, Vitaliy Avrutin, Ümit Özgür, and Hadis Morkoç "Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252H (4 March 2013); https://doi.org/10.1117/12.2000558

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