Paper
19 February 2013 Back-side-illuminated image sensor with burst capturing speed of 5.2 Tpixel per second
Author Affiliations +
Proceedings Volume 8659, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV; 865904 (2013) https://doi.org/10.1117/12.2003496
Event: IS&T/SPIE Electronic Imaging, 2013, Burlingame, California, United States
Abstract
We have developed a back-side-illuminated image sensor with a burst capturing speed of 5.2 Tpixels per second. Its sensitivity was 252 V/lux·s (12.7 times that of a front-side-illuminated image sensor) in an evaluation. Sensitivity of a camera system was 2,000 lux F90. The increased sensitivity resulted from optical and time aperture ratios of 100% and also by increasing from a higher optical utilization ratio. The ultrahigh-speed shooting resulted from the use of in-situ storage image sensor. Reducing the wiring resistance and dividing the image area into eight blocks increased the maximum frame rate to 16.7 million frames per second. The total pixel count was 760 horizontally and 411 vertically. The product of the pixel count and maximum frame rate is often used as a figure of merit for high-speed imaging devices, and in this case, 312,360 multiplied by 16.7 million yields 5.2 Tpixels per second. The burst capturing speed is thus 5.2 Tpixels per second, which is the highest speed achieved in high-speed imaging devices to date.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Arai, J. Yonai, T. Hayashida, H. Ohtake, H. van Kuijk, and T. Goji Etoh "Back-side-illuminated image sensor with burst capturing speed of 5.2 Tpixel per second", Proc. SPIE 8659, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV, 865904 (19 February 2013); https://doi.org/10.1117/12.2003496
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Cited by 12 scholarly publications and 1 patent.
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KEYWORDS
Charge-coupled devices

Image sensors

CCD image sensors

Sensors

Cameras

CCD cameras

Electrodes

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