Compact modeling of fin-width roughness induced FinFET device variability using the perturbation method

Qi Cheng; Weiling Kang; Yijian Chen

doi:10.1117/12.2011551

29 March 2013 Compact modeling of fin-width roughness induced FinFET device variability using the perturbation method

Qi Cheng, Weiling Kang, Yijian Chen

Proceedings Volume 8684, Design for Manufacturability through Design-Process Integration VII; 86840I (2013) https://doi.org/10.1117/12.2011551
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

A compact model is developed to study the fin-width roughness (FWR) induced device variability and its impacts on FinFET performance. The perturbation theory is applied to obtain the analytic solution to nonlinear Poisson’s equation by treating FWR as a small deviation/perturbation from the ideal (flat) fin boundary. High accuracy of this compact model is verified with TCAD simulations. Both model calculation and TCAD simulation results show that FWR variation significantly affects FinFET device behavior. The conventional short-channel model is inaccurate to describe the FWR effects. Several types of FWR functions are studied and important device parameters such as V_t.sat, V_t.lin, DIBL are extracted from TCAD simulations, all of which are found sensitive to FWR variation.

Citation Download Citation

Qi Cheng, Weiling Kang, and Yijian Chen "Compact modeling of fin-width roughness induced FinFET device variability using the perturbation method", Proc. SPIE 8684, Design for Manufacturability through Design-Process Integration VII, 86840I (29 March 2013); https://doi.org/10.1117/12.2011551

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