Characterization of single photon avalanche diodes fabricated by 0.13um CMOS technology

Jiayu Guo; Chuyu Chen; Liang Feng; Xiaofeng Pu; Xiaoli Ji; Feng Yan

doi:10.1117/12.2034784

21 August 2013 Characterization of single photon avalanche diodes fabricated by 0.13μm CMOS technology

Jiayu Guo, Chuyu Chen, Liang Feng, Xiaofeng Pu, Xiaoli Ji, Feng Yan

Proceedings Volume 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications; 890824 (2013) https://doi.org/10.1117/12.2034784
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

In this paper, two different SPAD structures are designed and fabricated by 0.13μm CMOS technology. For the structure-1, a guard ring with low implanted p-well is used at the edge of p⁺ region, which prevents the periphery region breakdown while for the structure-2 a “virtual” guard ring structure with a p^- well under the whole P⁺ region is designed. The first structure exhibits a maximum photon detection probability of 15% and a typical dark count rate of 18 kHz at room temperature while the second structure exhibits a maximum of photon detection probability of 28% and a dark count rate of 23 kHz. These results would give a help for further advanced SPAD design.

Citation Download Citation

Jiayu Guo, Chuyu Chen, Liang Feng, Xiaofeng Pu, Xiaoli Ji, and Feng Yan "Characterization of single photon avalanche diodes fabricated by 0.13μm CMOS technology", Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 890824 (21 August 2013); https://doi.org/10.1117/12.2034784

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