Paper
23 August 2013 A high Q terahertz one-dimensional photonic crystal cavity and its applications
Tao Chen, Pingan Liu, Jianjun Liu, Zhi Hong
Author Affiliations +
Proceedings Volume 8909, International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications; 89090H (2013) https://doi.org/10.1117/12.2033031
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
A terahertz one-dimensional photonic crystal (PC) cavity with high Q-factor is demonstrated theoretically and experimentally. The cavity consists of two parallel distributed Bragg mirrors and one air layer between them as defect layer. By increasing the length of the defect layer, the cavity has a very narrow transmission bandwidth (FWHM) of 30MHz at resonant frequency of 336GHz, i.e. a high Q over 1.1×104 is achieved. What's more, an optically controllable THz switch is demonstrated by light irradiating on one of the middle silicon wafer in the cavity, the optical beam power needed for the switch is remarkably reduced to 0.16 W/cm2, which is nearly 50 times smaller than that for a THz switch using a single silicon wafer. Finally, such high Q cavity is very sensitive to the refractive index change in the cavity, it is suitable to be used in gas sensing. The experimental results verified its applications in H2, N2, and CO2 gas detections.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tao Chen, Pingan Liu, Jianjun Liu, and Zhi Hong "A high Q terahertz one-dimensional photonic crystal cavity and its applications", Proc. SPIE 8909, International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications, 89090H (23 August 2013); https://doi.org/10.1117/12.2033031
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KEYWORDS
Silicon

Switches

Semiconducting wafers

Photonic crystals

Terahertz radiation

Transmittance

Wafer-level optics

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