PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
InSb pin photodiodes and nBn photodetectors were fabricated by Molecular Beam epitaxy (MBE) on InSb
(100) n-type substrate and characterized. MBE Growth conditions were carefully studied to obtain high
quality InSb layers, exhibiting in pin photodiode design dark current density values as low as 13nA.cm-2 at
-50mV and R0A product as high as 6x106 WΩcm2 at 77K. Then, a new unipolar nBn InSb/InAlSb/InSb detector structure on InSb substrate were designed in order to suppress generation-recombination dark
current. The first InSb nBn devices were fabricated and preliminary electrical characterizations are reported.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
A. Evirgen, J. Abautret, J. P. Perez, H. Aït-Kaci, P. Christol, J. Fleury, H. Sik, A. Nedelcu, R. Cluzel, A. Cordat, "InSb photodetectors with PIN and nBn designs," Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 899313 (31 January 2014); https://doi.org/10.1117/12.2039156