Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition

Yuh-Shiuan Liu; Tsung-Ting Kao; Md. Mahbub Satter; Zachary Lochner; Xiao-Hang Li; Shyh-Chiang Shen; P. Douglas Yoder; Theeradetch Detchprohm; Russell D. Dupuis; Yong Wei; Hongen Xie; Alec Fischer; Fernando A. Ponce

doi:10.1117/12.2036835

27 February 2014 Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition

Yuh-Shiuan Liu, Tsung-Ting Kao, Md. Mahbub Satter, Zachary Lochner, Xiao-Hang Li, Shyh-Chiang Shen, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando A. Ponce

Author Affiliations +

Proceedings Volume 9002, Novel In-Plane Semiconductor Lasers XIII; 90020H (2014) https://doi.org/10.1117/12.2036835
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

A 245.3 nm deep ultraviolet optically pumped AlGaN based multiple-quantum-well laser operating at room temperature is described. Epitaxial growth was performed by metalorganic chemical vapor deposition on a c-plane bulk AlN substrate at a growth temperature of ~ 1130 °C. The wafer was fabricated into cleaved bars with a cavity length of ~1.45 mm and the lasing threshold was determined to be 297 kW/cm² under pulsed 193 nm ArF excimer laser excitation. A further ~20% reduction in threshold pumping power density was observed with six pairs of SiO₂/HfO₂ distributed Bragg reflector deposited at the rear side of facets.

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Yuh-Shiuan Liu, Tsung-Ting Kao, Md. Mahbub Satter, Zachary Lochner, Xiao-Hang Li, Shyh-Chiang Shen, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Yong Wei, Hongen Xie, Alec Fischer, and Fernando A. Ponce "Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90020H (27 February 2014); https://doi.org/10.1117/12.2036835

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