Paper
28 March 2014 Evaluation of integration schemes for contact-hole grapho-epitaxy DSA: a study of substrate and template affinity control
A. Romo-Negreira, T. R. Younkin, R. Gronheid, S. Demuynck, N. Vandenbroeck, T. Seo, D. J. Guerrero, D. Parnell, M. Muramatsu, S. Kawakami, T. Yamauchi, K. Nafus, M. H. Somervell
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Abstract
An electrical test vehicle for fabricating direct self-assembly (DSA) sub-30 nm via interconnects has been fabricated employing a soft mask grapho-epitaxy contact-hole shrink. The generation of the resist pre-pattern was carried out using 193i lithography on three different stacks and the BCP assembly was evaluated with and without template affinity control on the resist pre-pattern. After DSA shrink, the holes were transferred in a 100 nm oxide for standard Tungsten metallization for electrical characterization.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Romo-Negreira, T. R. Younkin, R. Gronheid, S. Demuynck, N. Vandenbroeck, T. Seo, D. J. Guerrero, D. Parnell, M. Muramatsu, S. Kawakami, T. Yamauchi, K. Nafus, and M. H. Somervell "Evaluation of integration schemes for contact-hole grapho-epitaxy DSA: a study of substrate and template affinity control", Proc. SPIE 9049, Alternative Lithographic Technologies VI, 90491L (28 March 2014); https://doi.org/10.1117/12.2046119
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Cited by 4 scholarly publications and 2 patents.
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KEYWORDS
Etching

Semiconducting wafers

Chemical vapor deposition

Directed self assembly

Fourier transforms

Polymers

Polymethylmethacrylate

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