Paper
16 December 2013 Structural, optical and electrical properties of delafossite CuGaO2 films grown by sol-gel method
M. J. Han, T. Huang, J. Z. Zhang, Y. W. Li, Z. G. Hu
Author Affiliations +
Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 906809 (2013) https://doi.org/10.1117/12.2053125
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
Transparent p-type conductive CuGaO2 films have been fabricated on sapphire substrates by sol–gel method. The stable sol solution for CuGaO2 were formed by copper(II) acetate monohydrate and gallium(III) nitrate hydrate, and the c-axis orientation of CuGaO2 films were strengthened with increasing annealing temperature. The pure phase CuGaO2 film was obtained at 900°C for 30 min in N2 atmosphere, and its microstructure, compositions, optical and electrical properties were analyzed. It was found that the sol-gel derived CuGaO2 films show a high optical transparency (60-80%) in the visible region, the direct and indirect band gaps were approximately 3.56 and 3.24 eV, respectively. It shows a crossover from the thermal activation behavior to that of three-dimensional variable range hopping from the temperature-dependent electrical conductivity at about 160 K.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. J. Han, T. Huang, J. Z. Zhang, Y. W. Li, and Z. G. Hu "Structural, optical and electrical properties of delafossite CuGaO2 films grown by sol-gel method", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 906809 (16 December 2013); https://doi.org/10.1117/12.2053125
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KEYWORDS
Sol-gels

Copper

Sapphire

Annealing

Crystals

Gallium

Thin films

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