Characteristic optimization of 1.3-μm InGaAsP MQW lasers for direct modulation applications

Fei Guo; Ruikang Zhang; Dan Lu; We Wang; Chen Ji

doi:10.1117/12.2071715

24 October 2014 Characteristic optimization of 1.3-μm InGaAsP MQW lasers for direct modulation applications

Fei Guo, Ruikang Zhang, Dan Lu, We Wang, Chen Ji

Proceedings Volume 9270, Optoelectronic Devices and Integration V; 927004 (2014) https://doi.org/10.1117/12.2071715
Event: SPIE/COS Photonics Asia, 2014, Beijing, China

Abstract

We have investigated 1.3-μm InGaAsP strained multi-quantum-well (MQW) lasers on InP substrate for direct modulation applications using the commercial laser simulator PIC3D. The physical mechanisms affecting the laser dynamic characteristics such as nonradiative recombination losses and vertical electron leakage effect are considered in our simulation. The number of wells is optimized because increasing the number of QWs can decrease the nonradiative recombination losses and increase the modal differential gain, nevertheless, the carrier distribution between wells become more non-uniform with too many QWs numbers resulting in uneven simulated recombination rate and increasing Auger recombination. The influence of barrier height is analyzed and a tradeoff has to be determined because too high barriers results in more nonuniform carrier distribution in the active regions, increasing the Auger recombination rate severely while the vertical current leakage outside the QWs will increase dramatically at lower barrier height. The 1.3-μm FP laser with the MQWs of 6 wells, 1.15 Q barriers bandgap and 8 wells, 1.1 Q barrier bandgaps is fabricated and characterized. The FP laser with MQWs structures composed of 8 compressive strain quantum wells and 9 barriers with the optimized bandgap 1.1 Q shows better properties. The threshold current is around 19 mA and the resonance frequency of 9.5 GHz and 3-dB bandwidth in excess of 13.3 GHz at 120 mA injection current. This modulation frequency is suitable for 10 Gbits/s optical data transmission.

Citation Download Citation

Fei Guo, Ruikang Zhang, Dan Lu, We Wang, and Chen Ji "Characteristic optimization of 1.3-μm InGaAsP MQW lasers for direct modulation applications", Proc. SPIE 9270, Optoelectronic Devices and Integration V, 927004 (24 October 2014); https://doi.org/10.1117/12.2071715

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Modulation

Quantum wells

Optical simulations

Laser applications

Laser damage threshold

Computer simulations

Semiconductor lasers

Show All Keywords

Keywords/Phrases

Search In:

Publication Years