(HgZn)Te Infrared Photovoltaic Detectors

J Ameurlaine; A Rousseau; T Nguyen-Duy; R Triboulet

doi:10.1117/12.945846

18 July 1988 (HgZn)Te Infrared Photovoltaic Detectors

J Ameurlaine, A Rousseau, T Nguyen-Duy, R Triboulet

Proceedings Volume 0929, Infrared Optical Materials IV; (1988) https://doi.org/10.1117/12.945846
Event: 1988 Technical Symposium on Optics, Electro-Optics, and Sensors, 1988, Orlando, FL, United States

Abstract

The new (HgZn)Te alloys were found to present numerous advantages over (HgCd)Te, such as increased stability of the crystal lattice and reduced dislocation density. A suitable growth process is already in place. Adaptation of the classical (HgCd)Te planar process technology (ion implantation instead of mercury diffusion) permits the duplication of the performance characteristics found in (HgCd)Te. A particular attribute of this material is its exceptional performance at very long wavelengths and its stability at elevated temperatures. With growth method and process technology already in existence, series fabrication of these devices can be implemented without major problems. In view of the numerous technical advantages offered by (HgZn)Te over (HgCd)Te detectors, these may be considered to be serious candidates for future infrared systems.

Citation Download Citation

J Ameurlaine, A Rousseau, T Nguyen-Duy, and R Triboulet "(HgZn)Te Infrared Photovoltaic Detectors", Proc. SPIE 0929, Infrared Optical Materials IV, (18 July 1988); https://doi.org/10.1117/12.945846

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