Two-dimensional semiconductors for ultrafast photonic applications

Jun Wang

doi:10.1117/12.2076253

16 March 2015 Two-dimensional semiconductors for ultrafast photonic applications

Jun Wang

Proceedings Volume 9359, Optical Components and Materials XII; 935902 (2015) https://doi.org/10.1117/12.2076253
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Two-dimensional (2D) semiconductors possess unique optoelectronic properties and has become a research hot-spot in recent years. Realized that the sizable and thickness-dependent bandgap offers transition metal dichalcogenides (TMDCs) a huge potential in the development of photonic devices with high performance and unique functions, we studied extensively the ultrafast NLO property of a range of TMDCs. TMDCs with high-quality layered nanosheets were prepared using liquid-phase-exfoliation technique. Ultrafast saturable absorption, two-photon-absorption were observed from the 2D nanostructures. The exciting results open up the door to 2D photonic nano-devices, such as optical switches, mode-lockers, optical limiters, etc., capable of ultrafast response and broadband tunability.

Citation Download Citation

Jun Wang "Two-dimensional semiconductors for ultrafast photonic applications", Proc. SPIE 9359, Optical Components and Materials XII, 935902 (16 March 2015); https://doi.org/10.1117/12.2076253

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