Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement

Pei-Yang Yan; Guojing Zhang; Eric M. Gullikson; Ken A. Goldberg; Markus P. Benk

doi:10.1117/12.2087041

16 March 2015 Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement

Pei-Yang Yan, Guojing Zhang, Eric M. Gullikson, Ken A. Goldberg, Markus P. Benk

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 94220J (2015) https://doi.org/10.1117/12.2087041
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

Extreme ultraviolet lithography (EUVL) mask multi-layer (ML) blank surface roughness specification historically comes from blank defect inspection tool requirement. Later, new concerns on ML surface roughness induced wafer pattern line width roughness (LWR) arise. In this paper, we have studied wafer level pattern LWR as a function of EUVL mask surface roughness via High-NA Actinic Reticle Review Tool. We found that the blank surface roughness induced LWR at current blank roughness level is in the order of 0.5nm 3σ for NA=0.42 at the best focus. At defocus of ±40nm, the corresponding LWR will be 0.2nm higher. Further reducing EUVL mask blank surface roughness will increase the blank cost with limited benefit in improving the pattern LWR, provided that the intrinsic resist LWR is in the order of 1nm and above.

Citation Download Citation

Pei-Yang Yan, Guojing Zhang, Eric M. Gullikson, Ken A. Goldberg, and Markus P. Benk "Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94220J (16 March 2015); https://doi.org/10.1117/12.2087041

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