Optimization of high average power FEL beam for EUV lithography

Akira Endo

doi:10.1117/12.2182239

12 May 2015 Optimization of high average power FEL beam for EUV lithography

Akira Endo

Proceedings Volume 9512, Advances in X-ray Free-Electron Lasers Instrumentation III; 95121O (2015) https://doi.org/10.1117/12.2182239
Event: SPIE Optics + Optoelectronics, 2015, Prague, Czech Republic

Abstract

Extreme Ultraviolet Lithography (EUVL) is entering into high volume manufacturing (HVM) stage, with high average power (250W) EUV source from laser produced plasma at 13.5nm. Semiconductor industry road map indicates a scaling of the source technology more than 1kW average power by high repetition rate FEL. This paper discusses on the lowest risk approach to construct a prototype based on superconducting linac and normal conducting undulator, to demonstrate a high average power 13.5nm FEL equipped with optimized optical components and solid state lasers, to study FEL application in EUV lithography.

Citation Download Citation

Akira Endo "Optimization of high average power FEL beam for EUV lithography", Proc. SPIE 9512, Advances in X-ray Free-Electron Lasers Instrumentation III, 95121O (12 May 2015); https://doi.org/10.1117/12.2182239

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