Tantalum oxide nanoscale resistive switching devices: TEM/EELS study (Presentation Recording)

Kate J Norris; Jiaming Zhang; Emmanuelle Merced-Grafals; Srinitya Musunuru; Max Zhang; Katy Samuels; Jianhua J Yang; Nobuhiko P Kobayashi

doi:10.1117/12.2192488

5 October 2015 Tantalum oxide nanoscale resistive switching devices: TEM/EELS study (Presentation Recording)

Kate J Norris, Jiaming Zhang, Emmanuelle Merced-Grafals, Srinitya Musunuru, Max Zhang, Katy Samuels, Jianhua J Yang, Nobuhiko P Kobayashi

Author Affiliations +

Proceedings Volume 9553, Low-Dimensional Materials and Devices; 95530V (2015) https://doi.org/10.1117/12.2192488
Event: SPIE Nanoscience + Engineering, 2015, San Diego, California, United States

Abstract

The field of non-volatile memory devices has been boosted by resistive switching, a reversible change in electrical resistance of a dielectric layer through the application of a voltage potential. Tantalum oxide being one of the leading candidates for the dielectric component of resistance switching devices was investigated in this study. 55nm TaOx devices in all states were compared through cross sectional TEM techniques including HRTEM, EELS, and EFTEM and will be discussed in this presentation. Based on the chemical and physical features found in the cross sectioned nanodevices we will discuss the switching mechanism of these nanoscale devices.

Conference Presentation

Citation Download Citation

Kate J Norris, Jiaming Zhang, Emmanuelle Merced-Grafals, Srinitya Musunuru, Max Zhang, Katy Samuels, Jianhua J Yang, and Nobuhiko P Kobayashi "Tantalum oxide nanoscale resistive switching devices: TEM/EELS study (Presentation Recording)", Proc. SPIE 9553, Low-Dimensional Materials and Devices, 95530V (5 October 2015); https://doi.org/10.1117/12.2192488

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