Surface passivated colloidal CuIn(S,Se)2 quantum dots for quantum dot heterojunction solar cells (Presentation Recording)

Emre Yassitepe; Oleksandr Voznyy; Edward Sargent; Ana Flavia F. Nogueira

doi:10.1117/12.2188567

5 October 2015 Surface passivated colloidal CuIn(S,Se)₂ quantum dots for quantum dot heterojunction solar cells (Presentation Recording)

Emre Yassitepe, Oleksandr Voznyy, Edward Sargent, Ana Flavia F. Nogueira

Author Affiliations +

Proceedings Volume 9562, Next Generation Technologies for Solar Energy Conversion VI; 956208 (2015) https://doi.org/10.1117/12.2188567
Event: SPIE Optics + Photonics for Sustainable Energy, 2015, San Diego, California, United States

Abstract

Colloidal quantum dot heterojunction thin film solar cells (CQD-TFSC) utilize facile thin film deposition methods and promise high photon conversion efficiencies (PCE) to cost ratio which is highly desired for commercialization. So far, surface passivated PbS CQD-TFSCs show the highest PCE results, reaching 9.2% with good stability. Among other potential candidates, CuInSe2 CQDs stand out as a non-toxic material with high potential for performance, judging on bulk Cu(Ga,In)(S,Se)2 TFSCs reaching 20% PCE, with high stability. CuInSe2 CQDs has advantage over bulk films, mainly the much less expensive manufacturing cost of uniform deposition on large areas. Ga is known to cause phase separation in the bulk CIGS system. In a CQD form, CuInSe2 band gap can be tuned between 1 to 1.6 eV by quantum confinement without need for Ga and this eliminates the phase separation issue. Within our best knowledge, there are no reports on surface trap passivated CuInSe2 CQD-TFSCs. However Cu(In,Ga)(S,Se)2 colloidal particles were cast in thin film form and fused to form bulk-like crystals by various annealing conditions for solar cell devices. In this work, we investigated well-passivated CuInSe2 CQDs on n-type TiO2 and ZnO layers to form depleted heterojunction structure. We prepared luminescent CuInSe2 CQDs by synthetic wet chemistry methods and passivated the surface with 3-mercaptopropionic acid or tetrabutylammonium iodide using solid-state ligand exchange. X-ray photoelectron spectroscopy was used to confirm the ligand boding and surface coverage of the quantum dots. We will present the effect of synthesis and thin film preparation conditions on the solar cell device performance

Conference Presentation

Citation Download Citation

Emre Yassitepe, Oleksandr Voznyy, Edward Sargent, and Ana Flavia F. Nogueira "Surface passivated colloidal CuIn(S,Se)₂ quantum dots for quantum dot heterojunction solar cells (Presentation Recording)", Proc. SPIE 9562, Next Generation Technologies for Solar Energy Conversion VI, 956208 (5 October 2015); https://doi.org/10.1117/12.2188567

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Quantum dots

Heterojunctions

Solar cells

Thin film solar cells

Gallium

Thin film devices

Thin films

Show All Keywords

Keywords/Phrases

Search In:

Publication Years