Paper
4 September 2015 Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer
Mohammad A. Mannan, Khai V. Nguyen, Rahmi Pak, Cihan Oner, Krishna C. Mandal
Author Affiliations +
Abstract
Schottky barrier radiation detectors were fabricated on the Si-face of 50 μm thick detector grade n-type 4H-SiC epitaxial layers. The junction properties of the fabricated detectors were investigated by current-voltage (I-V) and capacitancevoltage (C-V) measurements. The radiation detector performances were evaluated by alpha pulse height spectroscopy using a 0.1 μCi 241Am radiation source. Deep level transient spectroscopy (DLTS) measurements were carried out to identify and characterize the electrically active defect levels present in the epitaxial layers. The performance of the detector was found to be limited by the presence of electrically active defect centers in the epilayer. Deep level defects were reduced significantly by isochronal annealing. Surface passivation studies were conducted on n-type 4H-SiC epilayers for use on radiation detectors for the first time. Energy resolution of the detector was found to have improved after passivation and the life time killing defects that were responsible for preventing full charge collection were reduced significantly. Systematic and thorough C-DLTS studies were conducted prior and subsequent to isochronal annealing to observe evolution of the deep level defects.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohammad A. Mannan, Khai V. Nguyen, Rahmi Pak, Cihan Oner, and Krishna C. Mandal "Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer", Proc. SPIE 9593, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII, 95931H (4 September 2015); https://doi.org/10.1117/12.2196582
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KEYWORDS
Annealing

Sensors

Silicon carbide

Carbon

Temperature metrology

Capacitance

Spectroscopy

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