Influence of vacancies on GaN/AlN interface characteristics

Yahor V. Lebiadok; Tatyana V. Bezyazychnaya; Dzmitri M. Kabanau; Gennadii I. Ryabtsev; Konstantin S. Zhuravlev

doi:10.1117/12.2211195

26 February 2016 Influence of vacancies on GaN/AlN interface characteristics

Yahor V. Lebiadok, Tatyana V. Bezyazychnaya, Dzmitri M. Kabanau, Gennadii I. Ryabtsev, Konstantin S. Zhuravlev

Proceedings Volume 9748, Gallium Nitride Materials and Devices XI; 97480W (2016) https://doi.org/10.1117/12.2211195
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

The results of the influence of point defects (vacancy with interstitial atom) on the GaN/AlN heterointerface is presented. It was ascertained that presence of Al atom vacancy in the heterointerface leads to the contacting layer atoms rearrangement. The presence of N atom vacancy does not influence on the contacting Ga and Al layers intermixing.

Citation Download Citation

Yahor V. Lebiadok, Tatyana V. Bezyazychnaya, Dzmitri M. Kabanau, Gennadii I. Ryabtsev, and Konstantin S. Zhuravlev "Influence of vacancies on GaN/AlN interface characteristics", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97480W (26 February 2016); https://doi.org/10.1117/12.2211195

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