Atomic layer epitaxy for quantum well nitride-based devices

Jennifer Hite; Neeraj Nepal; Virginia R. Anderson; Jaime A. Freitas; Michael A. Mastro; Charles R. Eddy

doi:10.1117/12.2209111

13 February 2016 Atomic layer epitaxy for quantum well nitride-based devices

Jennifer Hite, Neeraj Nepal, Virginia R. Anderson, Jaime A. Freitas, Michael A. Mastro, Charles R. Eddy

Proceedings Volume 9755, Quantum Sensing and Nano Electronics and Photonics XIII; 97551W (2016) https://doi.org/10.1117/12.2209111
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

The development and characterization of nitride QW structures grown by atomic layer epitaxy (ALEp) for device applications are discussed. We have grown epitaxial thin films (4-10nm) covering the full range of binary and ternary III-N compositions by ALEp. In this work, ALEp-grown QW structures are presented. Optical characteristics are discussed. Characterization of layer interfaces and composition are critical to the development of this growth technique for quantum-based devices. Structures to study this by atom probe tomography have been created. By understanding the structure of crystalline ALEp films with nanometer-scale thickness, the unique properties of these materials can be advanced for quantum-scale applications.

Citation Download Citation

Jennifer Hite, Neeraj Nepal, Virginia R. Anderson, Jaime A. Freitas, Michael A. Mastro, and Charles R. Eddy "Atomic layer epitaxy for quantum well nitride-based devices", Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 97551W (13 February 2016); https://doi.org/10.1117/12.2209111

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