Enhancement in device performance of hepta-layer coupled InGaAs quantum dot infrared detector by AuGe surface plasmons

Sushil Kumar Pandey; Lavi Tyagi; Hemant Ghadi; Harshal Rawool; Subhananda Chakrabarti

doi:10.1117/12.2237551

17 September 2016 Enhancement in device performance of hepta-layer coupled InGaAs quantum dot infrared detector by AuGe surface plasmons

Sushil Kumar Pandey, Lavi Tyagi, Hemant Ghadi, Harshal Rawool, Subhananda Chakrabarti

Author Affiliations +

Proceedings Volume 9921, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XIV; 99212P (2016) https://doi.org/10.1117/12.2237551
Event: SPIE Nanoscience + Engineering, 2016, San Diego, California, United States

Abstract

In this work, we have studied the effect of AuGe alloy nanoparticles deposition on properties of molecular beam epitaxy grown heptalayer coupled InGaAs 5.25 mono-layer quantum-dots (QDs) samples. AuGe 12 nm film was deposited using electron beam evaporator on these samples which were later annealed at 300 °C to create AuGe nanoparticles. SEM measurement confirms formation of AuGe nanoparticles which support surface Plasmon modes. The PL spectra at 20K confirms maximum enhancement of 53% in intensity of peak at ̴̴ 1123 nm for 300 °C annealed sample in comparison to as-grown (without nanoparticle) sample. Single pixel detectors were fabricated from asgrown and 300°C annealed nanoparticle sample using two level lithography and wet etching process. We have observed two-order and one-order augmentation in responsivity and detectivity from device having nanoparticles compared to the as-grown respectively at 80K. Peak detectivity of 4.2×10⁷cm.Hz ^1/2/W at 80K was observed for device having nanoparticles. Around 30% increment in spectral response having peak around 5μm at -1V bias for device having AuGe nanoparticles compared to the as-grown device was observed. The observed enhancement is due to increase light trapping or light scattering into the device by nanoparticles. Demonstration of this plasmonic-based detector will move forward the development of high-performance infrared QDs detectors.

Citation Download Citation

Sushil Kumar Pandey, Lavi Tyagi, Hemant Ghadi, Harshal Rawool, and Subhananda Chakrabarti "Enhancement in device performance of hepta-layer coupled InGaAs quantum dot infrared detector by AuGe surface plasmons", Proc. SPIE 9921, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XIV, 99212P (17 September 2016); https://doi.org/10.1117/12.2237551

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Sensors

Nanoparticles

Gallium arsenide

Indium gallium arsenide

Infrared detectors

Surface plasmons

Plasmonics

Show All Keywords

Keywords/Phrases

Search In:

Publication Years