The performance of InGaN-based red/green micro-LEDs

Zhe Zhuang; Daisuke Iida; Martin Velazquez-Rizo; Kazuhiro Ohkawa

doi:10.1117/12.2610287

5 March 2022 The performance of InGaN-based red/green micro-LEDs

Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120011J (2022) https://doi.org/10.1117/12.2610287
Event: SPIE OPTO, 2022, San Francisco, California, United States

Conference Poster

Abstract

We investigated the performance of InGaN-based red and green micro LEDs ranging from 98 × 98 μm² to 17 × 17 μm². The 47 × 47 μm² red and green micro-LEDs were obtained an on-wafer EQE of 0.36% at the peak wavelength of 626 nm at 4 A/cm². The peak wavelength was close to the red primary color defined in the Rec. 2020 standard in CIE 1931. We also evaluated the temperature stability of the micro-LEDs. The characteristic temperature was obtained 50 and 411 K under 10 A/cm² operation for the red and green LEDs, respectively.

Citation Download Citation

Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, and Kazuhiro Ohkawa "The performance of InGaN-based red/green micro-LEDs", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120011J (5 March 2022); https://doi.org/10.1117/12.2610287

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