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3 October 2022 AlGaN Fin light emitting diodes
Babak Nikoobakht, Yuqin Zong
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Proceedings Volume PC12200, Low-Dimensional Materials and Devices 2022; PC1220002 (2022) https://doi.org/10.1117/12.2633796
Event: SPIE Nanoscience + Engineering, 2022, San Diego, California, United States
Abstract
Previously we introduced a novel fin shape light-emitting diode (LED) architecture based on sub-micron n-ZnO/p-GaN heterojunctions that at high current densities demonstrated a droop-free behavior. Efficiency droop, which is the decline in internal quantum efficiency with increasing current density, is one of the significant challenges facing wide bandgap LEDs. In the present work, we discuss performance of fins of wide band gap materials such as AlGaN that are formed on GaN. Discussion also includes electroluminescence and different types of efficiencies of these LEDs for generation of UV wavelengths as well as the significance of the fin shape in improving their performance.
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Babak Nikoobakht and Yuqin Zong "AlGaN Fin light emitting diodes", Proc. SPIE PC12200, Low-Dimensional Materials and Devices 2022, PC1220002 (3 October 2022); https://doi.org/10.1117/12.2633796
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KEYWORDS
Light emitting diodes
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