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21 March 2023 Porous (In)GaN made by combining nanomasking and sublimation: from material properties to LEDs
Benjamin Damilano, Stéphane Vézian, Nuño Amado-Mendez, Marie-Pierre Chauvat, Virginie Brändli, Sébastien Chenot, Aimeric Courville, Julien Brault, Pierre Valvin, Magali Morales, Pierre Ruterana, Bernard Gil, Maria Tchernycheva
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2648957
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
By combining nanomasking with thermally resistant materials and sublimation in a molecular beam epitaxy reactor, porous (In)GaN layers can be obtained. The advantages and disadvantages of this technique compared to classical electrochemistry methods will be discussed. The porosity can be adjusted from 0 to 1 and the pore depth can be controlled by the sublimation temperature and time. Preferential sublimation occurs at the dislocation position which strongly enhance the photoluminescence properties. As the porosification process by sublimation does not depend on the doping, fully porous light emitting diodes can be demonstrated.
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Benjamin Damilano, Stéphane Vézian, Nuño Amado-Mendez, Marie-Pierre Chauvat, Virginie Brändli, Sébastien Chenot, Aimeric Courville, Julien Brault, Pierre Valvin, Magali Morales, Pierre Ruterana, Bernard Gil, and Maria Tchernycheva "Porous (In)GaN made by combining nanomasking and sublimation: from material properties to LEDs", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2648957
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KEYWORDS
Light emitting diodes
Gallium nitride
Indium gallium nitride
Doping
Interfaces
Luminescence
Molecular beam epitaxy
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