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14 March 2023 Tunnel junctions for new architecture of III-N devices (Conference Presentation)
Czeslaw Skierbiszewski, Grzegorz Muzioł, Henryk Turski, Marcin Siekacz, Julia Slawinska, Mikolaj Chlipala, Mikolaj Zak
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Proceedings Volume PC12441, Light-Emitting Devices, Materials, and Applications XXVII; PC124410J (2023) https://doi.org/10.1117/12.2649797
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Incorporation of tunnel junctions (TJs) to device structure enabled vertical integration of multicolor light emitting diodes (LEDs) and laser diodes (LDs). The TJs allows to control the current path in distributed-feedback LDs and micro-LEDs. It opens possibility to design new architecture devices like “inverted” LEDs or LDs with TJs located below active region. These devices have the sequence of p and n type layers similar to structures grown on hypothetical p-type (0001) GaN substrate, which is beneficial for high carrier injection efficiency, and enables operation at cryogenic temperatures. Finally, we also discuss the properties of bi-directional LEDs and wavelength-tunable LEDs.
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Czeslaw Skierbiszewski, Grzegorz Muzioł, Henryk Turski, Marcin Siekacz, Julia Slawinska, Mikolaj Chlipala, and Mikolaj Zak "Tunnel junctions for new architecture of III-N devices (Conference Presentation)", Proc. SPIE PC12441, Light-Emitting Devices, Materials, and Applications XXVII, PC124410J (14 March 2023); https://doi.org/10.1117/12.2649797
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KEYWORDS
Light emitting diodes
Hydrogen
Magnesium
Molecular beam epitaxy
Plasma
Polishing
Resistance
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