fabrication and modeling study to reduce valence band offset in HgCdTe MWIR nBn photodetectors grown on silicon using superlattice barriers

Ryan Sellers; Sushant Sonde; Peihong Man; Zahira El Khalidi; Zaheer Ahmad; Silviu Velicu; Danial Zengeneh

doi:10.1117/12.2677394

10 October 2023 fabrication and modeling study to reduce valence band offset in HgCdTe MWIR nBn photodetectors grown on silicon using superlattice barriers

Ryan Sellers, Sushant Sonde, Peihong Man, Zahira El Khalidi, Zaheer Ahmad, Silviu Velicu, Danial Zengeneh

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Proceedings Volume PC12687, Infrared Sensors, Devices, and Applications XIII; PC1268709 (2023) https://doi.org/10.1117/12.2677394
Event: SPIE Optical Engineering + Applications, 2023, San Diego, California, United States

Abstract

Several MWIR nBn HgCdTe devices grown on silicon were studied. While several parameters are varied in the study, the devices can most usefully be put into 2 groups: those with a type 3 HgTe/CdTe superlattice barrier and those simply with a wider bandgap alloy barrier. Other groups have shown the potential advantage of a super-lattice barrier. Many devices were grown and fabricated, and were run through several optical and electrical tests to evaluate their properties. Utilizing the finite volume method based semiconductor device modeling software Devsim, these devices were simulated to extract further material parameters.

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Ryan Sellers, Sushant Sonde, Peihong Man, Zahira El Khalidi, Zaheer Ahmad, Silviu Velicu, and Danial Zengeneh "fabrication and modeling study to reduce valence band offset in HgCdTe MWIR nBn photodetectors grown on silicon using superlattice barriers", Proc. SPIE PC12687, Infrared Sensors, Devices, and Applications XIII, PC1268709 (10 October 2023); https://doi.org/10.1117/12.2677394

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KEYWORDS

Silicon

Superlattices

Mercury cadmium telluride

Mid-IR

Modeling

Photodetectors

Fabrication

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